smd type ic www.kexin.com.cn 1 smd type ic pin configuration n-channel 60-v (d-s), 175 mosfet KI4559EY absolute maximum ratings t a =25 parameter symbol n-channel p-channel unit drain-source voltage v ds 60 -60 v gate-source voltage v gs 20 20 v continuous drain current (t j =150 )* t a =25 4.5 3.1 a t a =70 3.8 2.6 a pulsed drain current i dm 30 30 a continuous source current (diode conduction)* i s 2-2a maximum power dissipation* t a =25 w t a =70 w operating junction and storage temperature range t j ,t stg maximum junction-to-ambient * r thja /w *surface mounted on fr4 board, t 10 sec. 62.5 -55to175 i d p d 2.4 1.7
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics t j =25 parameter symbol min typ max unit v ds =v gs ,i d =250 a n-ch 1 v ds =v gs ,i d = -250 a p-ch -1 v ds =0vv gs = 20 v n-ch 100 v ds =0vv gs = 20 v p-ch 100 v ds = 60v, v gs =0v n-ch 2 v ds =-60v,v gs =0v p-ch -2 v ds =60v,v gs =0v,t j =55 n-ch 25 v ds =-60v,v gs =0v,t j =55 p-ch -25 v ds 5v,v gs =10v n-ch 20 v ds -5 v, v gs =-10v p-ch -20 v gs =10v,i d =4.5a n-ch 0.045 0.055 v gs =-10v,i d = -3.1a p-ch 0.100 0.120 v gs =4.5v,i d = 3.9a n-ch 0.055 0.075 v gs =-4.5v,i d = -2.8a p-ch 0.125 0.150 v ds =15v,i d =4.5a n-ch 13 v ds =-15v,i d = -3.1a p-ch 7.5 i s =2a,v gs =0v n-ch 0.9 1.2 i s =-2a,v gs = 0 v p-ch -0.8 -1.2 n-channel n-ch 19 30 v ds =30v,v gs = 10v, i d =4.5a p-ch 16 25 n-ch 4 p-channel p-ch 4 v ds =-30v,v gs =-10v,i d = -3.1a n-ch 3 p-ch 1.6 n channel n-ch 13 20 v dd =30v,r l =30 p-ch 8 15 i d =1a,v gen =10v,r g =6 n-ch 11 20 p-ch 10 20 p-channel n-ch 36 60 v dd =-30v,r l =30 p-ch 12 25 i d =-1a,v gen =-10v,r g =6 n-ch 11 20 p-ch 35 50 i f =2a,d i /d t =100a/ s n-ch 35 60 i f =-2a,d i /d t =100a/ s p-ch 60 90 * pulse test; pulse width 300 s, duty cycle 2%. nc source-drain reverse recovery time t rr ns t d(on) t r t d( off) t f fall time turn on time a s v v a v gs( th) i gss i dss na a g fs forward transconductance* rise time testconditons q g gate threshold voltage gate body leakage zero gate voltage drain current i d(on) on state drain currenta turn off delay time r ds(on) drain source on state resistance* diode forward voltage* total gate charge gate source charge gate drain charge v sd q gs q gd KI4559EY
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